The various technical specifications of smartphones and tablets that improve with time, the RAM looks like one of the more “stable”. You see devices with capacity between 512 MB and 3 GB, but no one seems that will skyrocket in value — at least until now. That’s because the market begins to look too kindly on a technology that before seemed that wouldn’t come out of the labs, but is now getting closer to winning the heart of the manufacturers.
This is the Resistive Random-access Memory (JUST KND of LAUGHED), a technology developed by researchers at Rice University. She’s worked for years and has as its ACE in the hole using the Silicon oxide, a material that can also optimize screens and batteries.
According to the latest article of these scientists, that is superior to the competitors JUST KND of LAUGHED on virtually all counts. The secret is in the insertion of a dielectric material (which does not conduct electricity usually) instead of porous metal between two cables — in this case, the silicon dioxide, which is abundant on Earth and quite used and studied. When a voltage high enough is applied in this chain, a narrow way of driving is formed. Is he that allows writing, sumico and rewrite the data in this type of memory.
And what’s good?
The JUST KND of LAUGHED is faster and saves more data in a smaller space than flash memory, which even begins to make the current market. An example: it is possible to store up to 1 TB of data in a device the size of a postage stamp. Have you ever imagined your smartphone with as much memory as well?
Manufacturing is also improving and already is more attractive than rival processes. The JUST KND of LAUGHED can be manufactured in a room at room temperature, has low power consumption, is denser (i.e. stores more dads), possesses high operating speed and long-lasting cycle of duration.
For now, it is still early to be JUST KND of LAUGHED at some speculated appliance, but the researchers expect to close in the same year the first partnerships with manufacturers.